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| inchange semiconductor product specification silicon pnp power transistors 2SA2031 description ? ? with to-3pn package ? complement to type 2sc5669 ? wide area of safe operation ? large current capacitance applications ? for audio frequency output applications pinning pin description 1 base 2 collector 3 emitter absolute maximum ratings(ta=25 ?? ) symbol parameter conditions value unit v cbo collector-base voltage open emitter -250 v v ceo collector-emitter voltage open base -230 v v ebo emitter-base voltage open collector -6 v i c collector current -15 a i cm collector current-peak -30 a t a =25 ?? 2.5 p c collectorl power dissipation t c =25 ?? 140 w t j junction temperature 150 ?? t stg storage temperature -55~150 ?? fig.1 simplified outline (to-3pn) and symbol
inchange semiconductor product specification 2 silicon pnp power transistors 2SA2031 characteristics tj=25 ?? unless otherwise specified symbol parameter conditions min typ. max unit v (br)ceo collector-emitter breakdown voltage i c =-50ma; r be = ?t -230 v v (br)cbo collector-base breakdown voltage i c =-5ma; i e =0 -250 v v (brebo emitter-base breakdown voltage i e =-5ma; i c =0 -6 v v cesat collector-emitter saturation voltage i c =-7.5 a;i b =-0.75a -0.3 -2.0 v v be base-emitter saturation voltage i c =-7.5a ; v ce =-5v -1.5 v i cbo collector cut-off current v cb =-250v; i e =0 -100 | a i ebo emitter cut-off current v eb =-4v; i c =0 -100 | a h fe-1 dc current gain i c =-1a ; v ce =-5v 60 160 h fe-2 dc current gain i c =-7.5a ; v ce =-5v 35 c ob output capacitance i e =0 ; v cb =-10v,f=1mhz 400 pf f t transition frequency i c =-1a ; v ce =-5v 10 mhz switching times t on turn-on time 0.45 | s t stg storage time 1.75 | s t f fall time i c =-7.5a;r l =6.67 |? i b1 =-i b2 =-0.75a v cc =-50v 0.25 | s inchange semiconductor product specification 3 silicon pnp power transistors 2SA2031 package outline fig.2 outline dimensions (unindicated tolerance: ? 0.1mm) inchange semiconductor product specification 4 silicon pnp power transistors 2SA2031 |
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